Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

Features

Overload capability
Low on-state voltage
Enhanced controllability
Improved diode
High interconnection reliability

Simplified inverter system
Increased power
Frame size jump
Low losses
Optimized driving

Applications

Motor control and drives
Commercial, construction, and agricultural vehicles

Photovoltaic energy system solutions
Uninterruptible power supplies (UPS)

Specifications

1200V or 2300V voltage class
300A to 1800A continuous collector current
1.5V to 1.8V typical collector-emitter saturation voltage range

100nA gate-emitter leakage current
-40°C to +175°C operating temperature range

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Features

Applications

Specifications

Videos

husseinkey ELECTRONICS®

COMPANY