Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs

Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs feature a low drain-source on-state resistance, a low gate charge, and a low gate capacitance, minimizing conduction and switching losses. These N-channel, enhancement-mode MOSFETs also feature an extremely low 22.7nC to 23.0nC reverse recovery charge.

The Infineon Technologies IAUZ4xN06S5 OptiMOS-5 MOSFETs are AEC-Q101 qualified for automotive applications. The 5.0mΩ IAUZ40N06S5 is available in a 3mm x 3mm S3O8 (PG-TSDSON-8) package. The 10.2mΩ IAUC41N06S5 is offered in a 5mm x 6mm Single SS08 (PG-TDSON-8) package.

Features

OptiMOS power MOSFET for automotive applications
N-channel, enhancement-mode, Logic Level devices
Extended qualification beyond AEC-Q101
Enhanced electrical testing
Robust design

MSL1 up to 260°C peak reflow
175°C maximum operating temperature
Green product (RoHS compliant)
100% Avalanche tested

Applications

General automotive applications
DC-DC
LED lighting

Wireless charging
ADAS
CAV (24V) applications

Specifications

60V drain-source breakdown voltage (V_(BR)DSS)
Drain-source on-state resistance (R_DS(on))
- IAUZ40N06S5: 5.0mΩ
- IAUC41N06S5: 10.2mΩ
Continuous drain current (I_D)
- IAUZ40N06S5: 90A
- IAUC41N06S5: 47A
Gate source voltage (V_GS)
- IAUZ40N06S5: ±16V
- IAUC41N06S5: ±20V

Power dissipation
- IAUZ40N06S5: 71W
- IAUC41N06S5: 42W
Reverse recovery charge (Q_rr)
- IAUZ40N06S5: 23nC
- IAUC41N06S5: 22.7nC
Package options
- IAUZ40N06S5: 3mm x 3mm S3O8 (PG-TSDSON-8)
- IAUC41N06S5: 5mm x 6mm Single SS08 (PG-TDSON-8)

Datasheets

IAUZ40N06S5L050 Datasheet
IAUC41N06S5N102 Datasheet

Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs

Features

Applications

Specifications

Datasheets

IAUZ40N06S5L050 Package Outline

IAUC41N06S5N102 Package Outline

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