Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board

Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board demonstrates the switching performance of the SOI high-side and low-side 2ED2101S06F Gate Driver. The 2ED2101S06F is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels with resonant-tank switching frequencies in the 500kHz range.

The Infineon EVAL 2ED2101 HB-LLC Evaluation Board allows for fast prototyping and a short time to market for more rapid market entry.

Features

Input voltage 350 – 425VDC
Maximum 200W at 16.7A, 400VDC power input, air-flow cooling sufficient
Overcurrent protection
Power-up LED reporting

Controller board with ICE2HS01G
Auxiliary power supply with isolated 13V and 5V for secondary side supply
PCB is 65mm × 137mm, 4 layers, 2oz. copper
RoHS compliant

Required Equipment

High voltage power supply (min. 430VDC, 1A current capability)
Resistive load of max. 16.7A load current (electric load) or 0.71Ω total resistance

Block Diagram

Component Layout

Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board

Infineon Power and Sensing Selection Guide

Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board

Features

Required Equipment

Block Diagram

Component Layout

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