Infineon Technologies EiceDRIVER™ Reinforced Isolated Gate Driver ICs

Infineon Technologies EiceDRIVER Reinforced Isolated Gate Driver ICs are dual-channel isolated gate driver ICs intended to drive Si and SiC MOSFETs and GaN HEMT power switches. The devices are available in a DSO package with 8mm input-to-output creepage and provide reinforced isolation utilizing on-chip coreless transformer (CT) technology.

The Infineon 2EDRx259X and 2EDRx258X variants in a 14-pin DSO package provide increased channel-to-channel creepage. The 2EDRx259X and 2EDRx258X are ideal for use in applications with higher bus voltage or higher pollution degrees and, in general, can ease PCB routing. All versions offer optional shoot-through protection (STP) and dead-time control (DTC) functionality. This functionality permits the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead time. With excellent common-mode transient immunity (CMTI), low part-to-part skew, and fast signal propagation, the EiceDRIVER Reinforced Isolated Gate Driver ICs are exceptional for use in fast-switching power conversion systems.

Features

2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMT power switches
Fast input-to-output propagation (38ns) with excellent stability (+9/-5ns)
Strong output stage of 5A/9A source/sink