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Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.
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Infineon’s broad offering of gate driver ICs complements the SiC discrete offering, providing the perfect solution for ultrafast SiC MOSFET switching. Using CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs together, SiC technology can improve efficiency, save space and weight, reduce the number of components and enhance system reliability.
Portfolio of Gate Driver ICs for CoolSiC MOSFET 650V with tailored UVLO levels to protect SiC MOSFET
The Infineon Technologies CoolSiC™ MOSFETs 650V is available in TO-247 3-pin, TO-247 4-pin, and D2PAK 7-pin package types.
Benefit from .XT interconnection technology is used in CoolSiC™ MOSFETs discrete packages for enhanced system power density. Infineon’s diffusion soldering process creates a strong thermal connection between the chip and the heat sink – resulting in up to 30% increased thermal dissipation and up to 15K lower operating temperatures with the positive effect of an extended lifetime.
