Infineon Technologies CoolGaN™ Integrated Power Stages (IPS) combine a half-bridge power stage with two enhancement mode CoolGaN HEMTs, including dedicated gate drivers in a small 8mm x 8mm QFN-28 package. The devices include the IGI60F1414A1L, IGI60F2020A1L, IGI60F2727A1L, and IGI60F5050A1L with two 140mΩ, 200mΩ, 270mΩ, and 500mΩ GaN switches, respectively.
The Infineon CoolGaN IPSs utilize the low-to-medium power area to support the design of high-density AC/DC chargers and adapters, implementing the superior switching behavior of CoolGaN HEMTs. The CoolGaN and Infineon’s other related power switches enable a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance Rdson is continually guaranteed.
• Active clamp flyback or hybrid flyback converters
• LLC or LCC resonant converters
• Single or interleaved synchronous buck or boost converters
• Single-phase or multiphase two-level inverters