Infineon Technologies CoolGaN™ 600V GIT HEMTs

Infineon Technologies CoolGaN™ 600V Gate Injection Technology (GIT) High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses. These GaN enhancement-mode power transistors are available in a ThinPAK 5×6 surface-mount package, ideal for applications that require a compact device without a heatsink. The small 5mm x 6mm2 footprint and low 1mm profile height makes the Infineon Technologies CoolGaN™ 600V GIT HEMTs perfect for achieving high power density.

Features

  • Enhancement mode transistor, normally OFF switch
  • GaN HEMT in small form factor leadless SMD package
  • GaN-tailored qualification
  • Ultra-fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequencies
  • System cost reduction savings
  • Reduces EMI
  • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)
  • Lead-free, Halogen-free, and RoHS compliant

Applications

  • SMPS for Industrial, telecom, and data centers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high-frequency LLC)
  • Low power SMPS
  • Chargers and adaptors

Specifications

  • 600V maximum continuous drain-source voltage
  • 800V minimum drain-source destructive breakdown voltage
  • Pulsed drain-source voltage
    • 750V maximum at +25°C
    • 650V maximum at +125°C
  • 750V maximum pulsed switching surge voltage
  • 8.2A to 12.8A maximum drain-source continuous current range
  • 12.2A to 23A maximum drain-source pulsed current range
  • 5.9A to 11A maximum drain-source pulsed current range
  • 4mA to 7.7mA maximum continuous gate current range
  • 406mA to 770mA maximum pulsed gate current range
  • -10V minimum continuous gate-source voltage
  • -25V minimum pulsed gate-source voltage
  • 41.6W to 55.5W maximum power dissipation range
  • 200V/ns maximum drain-source voltage slew rate
  • -40°C to +150°C operating temperature range

Infineon Technologies CoolGaN™ 600V GIT HEMTs