Infineon Technologies AIKQ120N75CP2 Duo Pack EDT2™ IGBT

Infineon Technologies AIKQ120N75CP2 Duo Pack EDT2™ IGBT features a 750V collector-emitter blocking voltage capability. The AIKQ120N75CP2 has smooth switching characteristics, a very low VCE(sat), 1.30V (typ.), and a very tight parameter distribution. The device also has a low gate charge QG and is co-packed with a fast soft recovery emitter controlled by 3 diodes.

Features

750 V collector-emitter blocking voltage capability
Smooth switching characteristics
Very low VCE(sat),1.30 V (typ.)
Short circuit robust
Very tight parameter distribution
Low gate charge QG
Co-packed with fast soft recovery emitter controlled 3 diode

Qualified according to AEC-Q101
Increase overvoltage margin in the application
Reduction of the number of paralleled devices required
Simple gate drive design
Self-limiting current under short circuit condition
Low EMI signature
High reliability and operating lifetime

Applications

xEV Inverter
Motor drive

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