- support@husseinkey.com
- livechat
Infineon Technologies 6ED223xS12T EiceDRIVER™ Level Shift Gate Driver ICs are high voltage (up to 1200V), high-speed insulated-gate bipolar transistors (IGBTs) with three independent high-side and low-side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable a ruggedized monolithic construction. Logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. This resistor can also derive an over‐current protection (OCP) function that terminates all six outputs.
The 3-phase 6ED223xS12T ICs provide an open drain FAULT signal to indicate an over-current or undervoltage shutdown. Fault conditions are cleared automatically after an externally programmed delay via an RC network. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operates up to 1200V. Propagation delays are matched to simplify the HVIC’s use in high-frequency applications.
