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Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.
When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by permitting higher operating temperatures and switching frequencies while maintaining high reliability. Infineon’s 1200V SiC MOSFET module family delivers superior gate-oxide reliability, which is allowed by its state-of-the-art trench design.
These power modules are packaged in industry standard EASY packages that can be tailored to different application needs and are available in a wide range of RDSon levels and circuit configurations such as 3-level, half-bridge, or six-pack. All EasyPACK™ and EasyDUAL™ MOSFET power modules can be ordered with pre-applied Thermal Interface Material (TIM), and additional features are offered. The Easy modules with a high-performance aluminum nitride (AlN) ceramic especially improve the thermal performance of RthJH.
The advantages of wide-bandgap silicon carbide (SiC) semiconductors emerge from their higher breakthrough electric field, more significant thermal conductivity, higher electron-saturation velocity, and lower intrinsic carrier concentration compared to silicon (Si). Based on these SiC material advantages, SiC MOSFETs engage switching transistors for high-power applications, such as solar inverters for off-/on-board electric vehicle (EV) chargers.
• Higher frequency operation
• Increased power density
• Highest efficiency for reduced cooling effort
• Reduce system and operational cost
• Extended operating conditions and increased power cycling capability
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