GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ (Merged-PiN-Schottky) Diodes offer superior price-performance index, industry-leading surge current and avalanche robustness, and high quality to provide high levels of efficiency and system reliability in high-frequency switching.

The GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes are offered in industry-standard SOT-227, TO-220-2, TO-247-2, TO-247-3, TO-252-2, and TO-263-7 packages and feature a 175°C maximum operating temperature.

Features

Gen4 Thin Chip Technology for low diode forward voltage (V_F)
Optimal price-performance
Superior Figure of Merit – Q_C x V_F
Enhanced Surge Current Capability

100% Avalanche (UIL) Tested
Low Thermal Resistance for Cooler Operation
Temperature Independent Fast Switching
Positive Temperature Coefficient of V_F

Applications

Boost diode in power factor correction (PFC)
Solar inverters
Uninterruptible power supplies (UPS)
Battery chargers
Freewheeling and anti-parallel diode in inverters
Motor drives
Switched-mode power supplies (SMPS)

AC-DC converters and DC-DC converters
LED and HID lighting
Industrial power supplies
EV fast chargers
Transportation
Pulsed power

Specifications

Package options: TO-252-2 , TO-263-7, TO-220-2, TO-247-2, TO-247-3, SOT-227
650V, 1200V, and 1700V repetitive reverse voltage (V_RRM)
2A to 300A forward current (I_F)

-55°C to +175°C operating temperature range (T_J)
Low junction capacitance (C) and low capacitive charge (Q_C)
No reverse recovery, no forward recovery
Easy to parallel without thermal runaway

Package Options

Mechanical Drawing - GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes

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