GaN Systems High Power IMS 3 Evaluation Platform

GaN Systems High Power IMS 3 Evaluation Platform evaluates the electrical and thermal performance of GaNPX® bottom‐side cooled E‐modes in high power applications. The optimized thermal and electrical designs provide an excellent reference for implementing a low-cost, high-performance design. The IMS3 half‐bridge daughter power board is populated with GaN Systems’ GS66516B (bottom‐side cooled GaN E‐mode transistor, rated at 650V/25mΩ) or GS66508B (bottom‐side cooled GaN E‐mode transistor, rated at 650V/50 mΩ).