Everspin Technologies EMD4E001G Spin-Transfer Torque MRAM

Everspin Technologies EMD4E001G Spin-Transfer Torque Magnetic RAM (STT-MRAM) is 1Gb non-volatile ST-DDR4 MRAM with 8 x 128Mb and 16 x 64Mb configuration. The EMD4E001G offers more effective management of I/O streams allowing storage OEMs to significantly improve the quality of service of their products. This device uses Double Data Rate (DDR) architecture to achieve high-speed operation. The ST-DDR4 architecture is an 8n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. Features include multipurpose register READ and WRITE capability, Per-Device Addressability (PDA), and on-device termination. This STT-MRAM operates at 0°C to 85°C temperature range. The STT-MRAM is compatible with Xilinx FPGA controllers and offer a persistent data buffer in storage and fabric/software accelerators, computational storage, and other applications.

Features

128Mb x8 and 64Mb x16 configuration
Supports most DDR4 features
Page size of 1024-bits for x8 and 2048-bits for x16
V_DD = V_DDQ = 1.2V
V_PP = 2.5V
0°C to 85°C operating temperature range
667MHz clock frequency (fCK)
On-device termination
Multipurpose register READ and WRITE capability
Per-Device Addressability (PDA)
Connectivity test
On-chip DLL aligns DQ, DQS, and DQS transition with CK transition

Burst lengths of 8 addresses
All addresses and control inputs are latched on rising edge of the clock
Bit Error Rate (BER) = 1 x 10-11
Data retention = 3 months at 70°C
Cycle endurance = 1 x 1010
Standard FBGA package options (Pb-free):
- 78-ball (10mm x 13mm) package (x8)
- 96-ball (10mm x 13mm) package (x16)
Timing-cycle time:
- 1.5ns @ CL = 10 (ST-DDR4 1333)
- 1.5ns @ CWL = 9 (ST-DDR4 1333)

Block Diagram

Applications

Storage and fabric/software accelerators
Computational storage

Everspin Technologies EMD4E001G Spin-Transfer Torque MRAM

Features

Block Diagram

Applications

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