Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET

Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET offers fast switching times in a SOT-26 (SOT-457) package. The MMFTP6312D MOSFET features a 20V maximum drain-source voltage, 0.70W to 0.96W maximum power dissipation range, and a 2.3A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, battery management, drivers, and logic-level converters.

Features

Fast switching times
Commercial/industrial-grade
UL 94V-0 case material

SOT-26 (SOT-457) package style
Moisture Sensitivity Level (MSL) 1
Lead-free, RoHS and REACH compliant

Applications

Signal processing
Battery management

Drivers
Logic level converters

Specifications

20V maximum drain-source voltage
±8V maximum gate-source voltage
0.70W to 0.96W maximum power dissipation range
2.3A maximum drain current
7.0A maximum peak drain current
1µA maximum drain-source leakage current
±100nA maximum gate-source leakage current
0.4V to 1.5V gate-source threshold voltage range
115mΩ to 155mΩ maximum drain-source on-state resistance range
467pF typical input capacitance
85pF typical output capacitance

38pf typical reverse transfer capacitance
8ns to 13ns typical turn-on time range
8ns to 18ns typical turn-off time range
4.4nC typical total gate charge
1.0nC typical gate-source charge
0.8nC typical gate-drain charge
1.2V maximum forward voltage
Thermal resistance
- <130K/W junction-to-case
- <60K/W junction-to-ambient
-55°C to +150°C junction temperature range

Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET

Features

Applications

Specifications

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