Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET offers fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package. The MMFTP3334K FET features a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, drivers, and logic-level converters.

Features

ESD protected gate
High drain current
Low on-state resistance
Fast switching times
Commercial-grade

UL 94V-0 case material
SOT-23 (TO-236) package style
Moisture Sensitivity Level (MSL) 1
AEC-Q101 qualified (-AQ only)
Lead-free, RoHS and REACH compliant

Applications

Signal processing
Logic level converters
Drivers

Specifications

30V maximum drain-source voltage
±20V maximum gate-source voltage
1000mW maximum power dissipation
4A maximum drain current
16A maximum peak drain current
1µA maximum drain-source leakage current
10µA maximum gate-source leakage current
0.8V to 2V gate threshold voltage range
71mΩ to 136mΩ maximum drain-source on-state resistance range
280pF typical input capacitance

55pF typical output capacitance
40pf typical reverse transfer capacitance
5.9nC typical total gate charge
0.8nC typical gate-source charge
1.2nC typical gate-drain charge
13ns typical turn-on delay/rise time
22ns typical turn-off delay/fall time
1.2V maximum forward voltage
125K/W typical junction-to-ambient thermal resistance
-55°C to +150°C junction temperature range

Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET

Features

Applications

Specifications

husseinkey ELECTRONICS®

COMPANY