• support@husseinkey.com
  • livechat
contact us

View Datasheet

Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs

Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25.3nC), and fast switching times with an Avalanche rating. With a wide -55°C to +175°C operating temperature range, these components offer a 60V drain-source breakdown voltage, 20A continuous drain current, and a 24mΩ on drain-source resistance. The TO-252AA packaged DI006H03SQ MOSFETs are for DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.

Features

  • Advanced Trench technology
  • Low on-state resistance
  • Fast switching times
  • Low gate charge
  • Avalanche rated
  • UL 94V-0 case material
  • TO-252AA D-PAK package
  • Moisture Sensitivity Level (MSL) 1
  • AEC-Q101 compliant (-Q suffix)
  • Lead-free, RoHS and REACH compliant

Applications

  • DC/DC converters
  • Power supplies
  • DC drives
  • Synchronous rectifiers
  • Commercial/Industrial-grade

Specifications

  • 60V drain-source breakdown voltage
  • 20A continuous drain current at +25°C
  • 24mΩ on drain-source resistance
  • ±20V gate-source voltage
  • 1.6V gate-source threshold voltage
  • 50A (-AQ suffix) or 60A peak drain current
  • 25.3nC gate charge
  • 25W (-AQ suffix) or 45W power dissipation
  • 6ns turn-on delay/rise time
  • -55°C to +175°C operating temperature range

husseinkey ELECTRONICS®

  • supptor@husseinkey.com
  • Live Chat

COMPANY

  • Privacy Center
  • Terms and Conditions
  • Accessibility
  • Sitemap
  • xxxxxxxxxxxx
  • admin@admin.com
  • livechat
Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs