Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

Diodes Inc. DMWS120H100SM4 1200V N-Channel Silicon Carbide (SiC) Power MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance. It enables high density and efficiency in industrial motor drivers, photovoltaic energy systems, DC-DC converters, and power supplies for data centers and telecoms. This device’s low R_DS(ON), coupled with a low Q_g at a 15V gate drive of 52nC, enables system designers to maximize efficiency while ensuring minimal power dissipation. The TO247-4 package includes an additional Kelvin-sensing pin in the fourth lead that connects to the source and provides the ability to optimize switching performance. The Diodes Inc. DMWS120H100SM4 is AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and rated to +150°C T_J.