Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET is designed to minimize R_DS(ON) and maintain impressive switching performance. This MOSFET features high conversion efficiency and a 100% Unclamped Inductive Switching (UIS) test in production, ensuring a reliable and robust end application. The DMTH15H017LPSWQ MOSFET offers a fast switching speed and low input capacitance. This MOSFET is Lead-free, RoHS-compliant, and Production Part Approval Process (PPAP) capable. Typical applications include synchronous rectification, power switching, and Class D audio amplifiers.

Features

Rated to 175°C:
- Ideal for high ambient temperature environments
High conversion efficiency
AEC-Q101 qualified
PPAP capable
Low R_DS(ON):
- Minimizes ON-state losses
100% Unclamped Inductive Switching (UIS) test in production:
- Ensures more reliable and robust end application

<1.1mm package profile:
- Ideal for thin applications
Low input capacitance
Fast switching speed
Lead-free finish
RoHS compliant
Halogen and Antimony free

Specifications

150V_DSS drain source voltage
±20V_GSS gate-source voltage
200A pulsed drain current
50A maximum continuous body diode forward current
-55°C to 175°C operating temperature range

Package:
- PowerDI5060-8
UL Flammability Classification Rating 94V-0
Weight:
- 0.097 grams

Applications

Synchronous rectification
Power switching
Class D audio amplifiers

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

Features

Specifications

Applications

Dimensions

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