Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET is a dual N-channel MOSFET designed to minimize R_DS(ON) and maintain impressive switching performance. This MOSFET features low input capacitance, fast switching speed, low input/output leakage, and an ultra-small surface mount package. The DMN52D0UVA MOSFET is ESD-protected, Lead-free, RoHS compliant, and Halogen and Antimony free. This MOSFET offers a very low gate threshold voltage and operates within -55°C to 150°C temperature range. Typical applications include battery management systems, power management functions, and load switches.

Features

Dual N-channel MOSFET
Low ON-resistance
Low gate threshold voltage (1V max)
Low input capacitance
Fast switching speed
Low input/output leakage

Ultra-small surface mount package
ESD protected
Lead-free
RoHS compliant
Halogen and Antimony free

Specifications

50V_DSS drain-source voltage
±12V_GSS gate-source voltage
1.2A pulsed drain current
480mA maximum continuous body diode forward current
-55°C to 150°C operating temperature range

47.8Ω gate resistance
Package:
- SOT563
UL Flammability Classification Rating 94V-0
Weight:
- 0.006 grams

Applications

Battery management systems
Power management functions
Load switches

Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET

Features

Specifications

Applications

Dimensions

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