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Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and maintain impressive switching performance. This MOSFET features low VGS(TH) and an ESD-protected gate. The DMN3732UFB4 MOSFET is AEC-Q100/101/104/200 qualified and comes in a 0.4mm ultra-low profile package. This MOSFET is Lead-free, RoHS compliant, and operates within the -55°C to 150°C temperature range. Typical applications include load switches, portable applications, and power management functions.

Features

  • 0.4mm ultra-low profile package for thin application
  • 0.6mm2 package footprint
  • Low VGS(TH)
  • Low RDS(ON)
  • ESD protected gate
  • AEC-Q100/101/104/200 qualified
  • PPAP capable
  • Lead-free
  • RoHS compliant
  • Halogen and Antimony free

Specifications

  • 30VDSS drain-source voltage
  • ±8VGSS gate-source voltage
  • 3A pulsed drain current
  • 0.96A maximum continuous body diode forward current
  • -55°C to 150°C operating temperature range
  • Package:
    • X2-DFN1006-3
  • UL flammability classification rating 94V-0
  • Weight:
    • 0.001 grams

Applications

  • Load switches
  • Portable applications
  • Power management functions

Dimensions

Mechanical Drawing - Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET

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Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET