Central Semiconductor GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low r_DS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 650V (11A), and 650V (17A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies.

Features

High voltage capability (650V)
Low gate charge and r_DS(ON) (as low as 3.2mΩ)
Efficient, fast switching
Space-saving DFN and CSP

Also available as bare die
Minimal power loss in conduction
High-frequency switching capability
No reverse recovery losses

Applications

Wireless charging (high power)
- Defense/aerospace
- Healthcare
- Consumer

Power Factor Correction (PFC)
Electric vehicle inverters

Dimensions

Central Semiconductor GaN N-Channel FETs

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