Broadcom APML-600JV/JT Photo MOSFETs

Broadcom APML-600JV/JT Photo MOSFETs are high-voltage photo MOSFETs designed for automotive applications. These MOSFETs consist of an AlGaAs infrared Light Emitting Diode (LED) input stage that is optically coupled to a high-voltage output detector circuit. This detector consists of a high-speed photovoltaic diode array and driver circuitry to switch ON/OFF two discrete high-voltage MOSFETs. The APML-600JV/JT photo MOSFET turns ON (contact closes) with a minimum input current of 1.5mA through the input LED. The photo MOSFET turns OFF (contact opens) with an input voltage of 0.4V or less. The APML-600JV/JT MOSFETs feature a compact solid-state bi-directional signal switch and are AEC-Q101 qualified. The APML-600JV/JT MOSFETs provide reinforced insulation and reliability to deliver safe signal isolation in automotive and high-temperature industrial applications. Ideally, these MOSFETs are used in battery insulation resistance measurement/leakage detection and Battery Management System (BMS).

Features

Compact solid-state bi-directional signal switch
AEC-Q101 qualified
Automotive temperature range:
- APML-600JV: T_A = -40ºC to 105ºC
- APML-600JT: T_A = -40ºC to 125ºC
1500V breakdown voltage V_O(OFF)at I_O(OFF) = 250μA
Avalanche-rated MOSFETs
Low off-state leakage current:
- APML-600JV: I_O(OFF) <500nA @ V_DS = 1000V
- APML-600JT: I_O(OFF) <1000nA @ V_DS = 1000V

On-resistance: R_ON <900Ω at I_O = 1mA
Turn-on time: T_ON <2.0ms
Turn-off time: T_OFF <0.5ms
300mil SO-16 package
Creepage and Clearance ≥8mm (input-output)
Creepage >5mm (between drain pins of MOSFETs)
Safety and regulatory approvals:
- IEC/EN/DIN EN 60747-5-5
- Maximum working insulation voltage 1414V_PEAK
- UL/cUL 1577, 5000V_RMS for 1 minute

Applications

Battery insulation resistance measurement/leakage detection
Battery Management System (BMS)

Broadcom APML-600JV/JT Photo MOSFETs

Features

Applications

Functional Diagram

Package Outline Drawing

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