Broadcom AFBR-S4N66P024M 2×1 NUV-MT Photomultiplier Array

Broadcom / Avago AFBR-S4N66P024M 2×1 NUV-MT Silicon Photomultiplier (SiPM) Array is intended for ultra-sensitive precision measurements of single photons. The AFBR-S4N66P024M provides two 6mm × 6mm SiPMs arranged in a 2×1 element array with a pitch of 7mm. Larger areas are covered with a SiPM-pitch of 7mm by tiling multiple AFBR-S4N66P024M arrays.

The array is ideal for the detection of low-level pulsed light sources, especially for the detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr3). Additionally, the device is lead-free and compliant with RoHS.

Features

  • 2×1 SiPM array
  • Array size 13.54mm × 6.54mm
  • High PDE of more than 65% at 420nm
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage
  • Excellent uniformity of gain
  • Four-side tileable, with high fill factors
  • Cell pitch 40µm × 40µm²
  • Highly transparent epoxy protection layer
  • Operating temperature range from 0°C to +60°C
  • RoHS, CFM, and REACH compliant

Applications

  • X-ray and gamma-ray detection
  • Gamma-ray spectroscopy
  • Safety and security
  • Nuclear medicine
  • Positron emission tomography
  • Life sciences
  • Flow cytometry
  • Fluorescence – luminescence measurements
  • Time-correlated single-photon counting
  • High energy physics
  • Astrophysics

Reflow Soldering Diagram

Performance Graph - Broadcom AFBR-S4N66P024M 2×1 NUV-MT Photomultiplier Array

Block Diagram

Block Diagram - Broadcom AFBR-S4N66P024M 2×1 NUV-MT Photomultiplier Array

Broadcom AFBR-S4N66P024M 2×1 NUV-MT Photomultiplier Array