Broadcom AFBR-S4N44P044M 2×2 NUV-MT Photomultiplier Array

Broadcom AFBR-S4N44P044M 2×2 NUV-MT Silicon Photomultiplier Array is ideally designed for ultra-sensitive precision measurements of single photons. The SiPM utilizes NUV-MT technology, which incorporates improved photo-detection efficiency (PDE) with reduced dark count rate and crosstalk compared to the NUV-HD technology. The AFBR-S4N44P044M features a 4mm pitch in both directions. Tiling multiple AFBR-S4N44P044M arrays can cover larger areas with a pitch of 8.3mm without any edge losses.

The Broadcom AFBR-S4N44P044M array encapsulates an epoxy clear mold compound for excellent mechanical stability and robustness. The epoxy is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near UV region.

The device is well suited for detecting low-level pulsed light sources, especially Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, or LaBr3).

Features

  • 2×2 SiPM array
  • Array size of 8.26mm × 8.26mm
  • High PDE (63% at 420nm)
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage
  • Excellent uniformity of gain
  • 4-side tileable, with high fill factors
  • 40μm cell pitch
  • Highly transparent epoxy protection layer
  • Operating temperature range from -20°C to +50°C
  • RoHS, CFM, and REACH compliant

Applications

  • X-ray and gamma-ray detection
  • Nuclear medicine
  • Positron emission tomography
  • Safety and security
  • Physics experiments
  • Cherenkov detection

Block Diagram

Block Diagram - Broadcom AFBR-S4N44P044M 2×2 NUV-MT Photomultiplier Array

Reflow Soldering Diagram

Performance Graph - Broadcom AFBR-S4N44P044M 2×2 NUV-MT Photomultiplier Array

Broadcom AFBR-S4N44P044M 2×2 NUV-MT Photomultiplier Array