Broadcom AFBR-S4N44P014M NUV-MT Silicon Photomultiplier

Broadcom AFBR-S4N44P014M NUV-MT Silicon Photomultiplier is a single-channel SiPM optimized for ultra-sensitive precision measurements of single photons. The AFBR-S4N44P014M utilizes NUV-MT technology, which combines improved photo-detection efficiency (PDE) with a decreased dark count rate and crosstalk compared to the NUV-HD technology. Multiple AFBRS4N44P014M SiPMs can be tiled to cover a large area.

The epoxy clear mold compound allows encapsulation for good mechanical stability and robustness. It is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards the blue and near-UV region.

The Broadcom AFBR-S4N44P014M offers a 40µm SPAD pitch. The device is ideally suited for detecting low-level pulsed light sources, especially Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr3).

Features

  • High PDE (63% at 420nm)
  • 4-side tileable, with high fill factors
  • 40μm cell pitch
  • Highly transparent epoxy protection layer
  • Operating temperature range from -20°C to +60°C
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage and gain between devices
  • RoHS, CFM, and REACH compliant

Applications

  • X-ray and gamma-ray detection
  • Nuclear medicine
  • Positron emission tomography
  • Safety and security
  • Physics experiments
  • Cherenkov detection

Block Diagram

Broadcom AFBR-S4N44P014M NUV-MT Silicon Photomultiplier

Reflow Soldering Diagram

Performance Graph - Broadcom AFBR-S4N44P014M NUV-MT Silicon Photomultiplier

Broadcom AFBR-S4N44P014M NUV-MT Silicon Photomultiplier