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Avalanche Technology Serial Persistent SRAM Memory devices are Magneto-Resistive Random-Access Memory (MRAM) that offers a density range from 1Mbit to 16Mbit. The high-performance serial persistent SRAM memory devices support Serial Peripheral Interface (SPI) with a single (108MHz) and double (54MHz) data rate modes. These P-SRAM memory devices operate from 1.71V to 2V and 2.7V to 3.6V voltage ranges. The P-SRAM memory devices are available in small footprint 8-pad WSON, 8-pin SOIC, and 24-Ball FBGA packages. These packages are compatible with similar low-power volatile and non-volatile products. The serial persistent SRAM memory devices are offered with -40°C to 85°C industrial and -40°C to 105°C industrial plus operating temperature ranges.
The MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM/P-SRAM). This MRAM is a true random-access memory that allows both reads and writes to occur randomly in memory. The MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. This technology offers low latency, low power, virtually infinite endurance and retention, and scalable non-volatile memory technology.
