Alliance Memory P30 Micron Parallel NOR Flash Embedded Memory

Alliance Memory P30 Micron Parallel NOR Flash Embedded Memories offer more density in less space, high-speed interface device, and support for code and data storage. These memory devices feature high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. The P30 NOR flash embedded memory devices provide high performance at a low voltage on a 16-bit data bus. The individually erasable memory blocks are sized for optimum code and data storage. These memory devices’ security features include 64 OTP bits one-time programmable register that is programmed with unique information from Micron. The P30 NOR flash embedded memory devices are JESD47 compliant and are available in a 56-lead TSOP (512Mb, 1Gb) and 64-ball Easy BGA packages (512Mb, 1Gb, 2Gb).

Features

High performance
Easy BGA package
- 100ns initial access for 512Mb and 1Gb Easy BGA
- 105ns initial access for 2Gb Easy BGA
- 25ns 16-word asynchronous page read mode
- 52MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode
- 4-, 8-, 16-, and continuous word options for burst mode
TSOP package with110ns initial access for 512Mb and 1Gb TSOP
Both Easy BGA and TSOP package
- Buffered Enhanced Factory Programming (BEFP) at 2MB/s (typical) using a 512-word buffer
- 1.8V buffered programming at 1.46MB/s (typical) using a 512-word buffer
Architecture
- High-density MLC at a low cost
- Symmetrically blocked architecture (512Mb, 1Gb, and 2Gb)
- Asymmetrically blocked architecture (512Mb and 1Gb)
- 4x 32KB parameter blocks (top or bottom configuration)
- 128KB main blocks
- Blank check to verify an erased block
Top and bottom boot block configuration
16-bit wide data bus

Security
- One-time programmable register with 64x OTP bits, programmed with unique information from Micron; 2112x OTP bits available for customer programming
- V_PP = V_SS absolute write protection
- Power-transition erase/program lockout
- Individual zero-latency block locking
- Individual block lock-down
- Password access
Software
- 25μs (typical) program suspend
- 25μs (typical) erase suspend
- Flash data integrator optimized
- Basic command set and Extended Function Interface (EFI) command set compatible
- Common flash interface
Density and packaging
- 56-lead TSOP package (512Mb and 1Gb)
- 64-ball Easy BGA package (512Mb, 1Gb, and 2Gb)

Specifications

Voltage
- 1.7V to 2V V_CC (core) voltage
- 1.7V to 3.6V V_CCQ (I/O) voltage
70µA (typical) for 512Mb and 75µA (typical) for 1Gb standby current
52MHz continuous synchronous read current, 21mA (typical) and 24mA (maximum)

Quality and reliability
- JESD47 compliant
- -40°C to +85°C operating temperature range
- Minimum 100,000 ERASE cycles per block
- 65nm process technology

Alliance Memory P30 Micron Parallel NOR Flash Embedded Memory

Features

Specifications

Easy BGA Block Diagram

husseinkey ELECTRONICS®

COMPANY