Alliance Memory AS9F Nand Flash Memories

Alliance Memory AS9F Nand Flash Memories features a Nand interface with x8 bus width and pinout compatibility for all densities. The NAND cell of these memories provides the most cost-effective solution for the solid-state mass storage market. These Nand flash memories are divided into blocks that are erased independently to preserve valid data. The AS9F Nand flash memories contain 1024/2048 blocks in the SLC NAND device. These AS9F memories data can be read out at 25ns(3.3V)/45ns(1.8V) cycle time per byte. The Nand flash memories feature a normal status register, fast data copy without external buffering, and an internal buffer to improve the read throughput. These AS9F Nand flash memories operate at -40°C to 85°C industrial temperature range, with a 2.7V to 3.6V power supply range for 3.3V devices and a 1.7V to 1.95V power supply range for 1.8V.

Features

  • 1Gbit/2Gbit/4Gbit/8Gbit densities
  • x8 bus width NAND interface and pinout compatibility for all densities
  • 63-Ball FBGA (9mm x 11mm x 1mm) package
  • ONFI 1.0 compliant command set
  • Program/erase locked during power transitions (Hardware Data Protection)
  • Normal status register
  • Internal buffer to improve the read throughput
  • Fast data copy without external buffering
  • OTP/Unique ID area
  • Read ID2 extension
  • Compliance with RoHS directive

Specifications

  • 2.7V to 3.6V power supply range for 3.3V devices
  • 1.7V to 1.95V power supply range for 1.8V devices
  • -40°C to 85°C industrial temperature range
  • -40°C to 105°C automotive grade 2 temperature range

Block Diagram

Block Diagram - Alliance Memory AS9F Nand Flash Memories

Logic Diagram

Location Circuit - Alliance Memory AS9F Nand Flash Memories

Alliance Memory AS9F Nand Flash Memories