Qorvo QPD0005M RF JFET Transistors

Qorvo QPD0005M RF JFET Transistors are single-path discrete GaNs on SiC HEMT in a plastic overmold DFN package. The transistors operate from 2.5 to 5.0GHz. The devices are single-stage, unmatched transistors capable of delivering a PSAT of 5.9W at +48V operation.

Features

  • Operating frequency range 2.5-5.0GHz
  • Operating drain voltage +48V
  • Maximum output power (PSAT) at 3.6GHz: 37.7dBm
  • Maximum drain efficiency at 3.6GHz: 74.1%
  • Efficiency-tuned P3dB gain at 3.6GHz: 18.6dB
  • 4.5mm x 4.0mm DFN package

Applications

  • WCDMA/LTE
  • Macrocell base station
  • Microcell base station
  • Small cell
  • Active antenna
  • 5G massive MIMO
  • General-purpose applications

Qorvo QPD0005M RF JFET Transistors