Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs

Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25nC typical), and fast switching times with an Avalanche rating. With a wide -55°C to +150°C junction temperature range, these components offer a 30V drain-source voltage, 1.4W power dissipation, and 20mJ single pulse avalanche energy. The QFN2x2 packaged DI010N03PW MOSFETs are for DC/DC converters, load switches, power management units, battery-powered devices, and commercial/industrial-grade applications.

Features

Tiny, space-saving QFN2x2 package
Low profile height
Low n-state resistance
Fast switching times
Low gate charge

UL 94V-0 case material
Moisture Sensitivity Level (MSL) 1
AEC-Q101 qualified (-AQ components only)
Lead-free, Halogen-free, and RoHS compliant

Applications

Power managment units
Battery powered devices
DC-DC converters

Load switches
Commercial/industrial-grade

Specifications

30V maximum drain-source voltage
±20V maximum continuous gate-source voltage
1.4W maximum power dissipation
7A (+100°C) or 10A (+25°C) maximum continuous drain current
50A maximum peak drain current
10A maximum continuous source current
35A maximum peak source current

20mJ maximum single pulse avalanche energy
1120pF typical input capacitance
150pF typical output capacitance
105pF typical reverse transfer capacitance
25nC typical total gate charge
5nC typical gate-source charge
6nC typical gate-drain charge
1.8Ωtypical gate resistance
-55°C to +150°C junction temperature range

Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs

Features

Applications

Specifications

husseinkey ELECTRONICS®

COMPANY