- support@husseinkey.com
- livechat
MACOM CGHV31500F1 2.7GHz to 3.1GHz, 500W GaN HEMT offers high efficiency and high gain designed explicitly for the 2.7GHz to 3.1GHz S-Band radar band. The gallium nitride (GaN) high electron mobility transistor (HEMT) delivers an extended pulse capability to meet emerging radar architecture trends.
The MACOM CGHV31500F1 GaN HEMT is matched to 50Ω on the input and 50Ω on the output. The CGHV31500F1 utilizes high power density 50V, 0.4µm GaN on silicon carbide (SiC) manufacturing process. The HEMT is housed in a ceramic/metal flange 440226 package.
