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Qorvo QPD1028 and QPD1028L 750W GaN on SiC Transistors are discrete Gallium Nitride on Silicon Carbide HEMT (High-Electron-Mobility Transistors) operating from 1.2GHz to 1.4GHz. These devices provide 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. The QPD1028 and QPD1028L Transistors are internally pre-matched for optimal performance can support both continuous wave and pulsed operations.
The Qorvo QPD1028 and QPD1028L GaN on SiC Transistors are housed in an industry-standard NI-780 air cavity package and are ideally suited for radar applications. The QPD1028L package includes an ear flange for bolt-down placement.
