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SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET

SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET offers low capacitance and high system efficiency. This MOSFET features high-speed switching, increased power density, reduced heat-sink size, and a reliable body diode. The GP2T080A120U 1200V SiC N-Channel MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. This MOSFET can be used in the applications such as solar inverters, EV charging stations, induction heating and welding, and motor drivers.

Features

  • High-speed switching
  • Reliable body diode
  • Increased power density
  • High efficiency
  • Reduced heat-sink size
  • All parts tested to above 1400V
  • Avalanche tested to 200mJ

Specifications

  • 1200V drain-source voltage (@ VGS=0V, ID=1μA)
  • -5V/20V gate-source voltage (@ recommended operational condition)
  • -55°C to 175°C operating temperature range
  • 26A to 35A continuous drain current range (@ TC=25°C to 100°C, VGS=20V)
  • 80A pulsed drain current (@ TC=25°C)

Applications

  • Solar inverters
  • Switch-mode power supplies
  • Motor drives
  • Induction heating and welding
  • EV charging stations
  • High voltage DC/DC converters 

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SemiQ GP2T080A120U 1200V SiC N-Channel MOSFET