Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET is a 40V automotive-compliant MOSFET that features a typical R_DS(ON) of 0.54mΩ at a gate drive of 10V, with a gate charge of 117nC. The DMTH4M70SPGWQ is offered in a PowerDI®8080-5 innovative high current, thermally efficient power package, ideal for electric vehicle (EV) applications. The AEC-Q101 qualified Diodes Incorporated DMTH4M70SPGWQ MOSFET facilitates designers of automotive high-power BLDC motor drives, DC-DC converters, and charging systems to maximize system efficiency while guaranteeing power dissipation is kept to an absolute minimum. The device provides an operating temperature of up to +175°C.

Features

Rated to +175°C, ideal for high ambient temperature environments
100% unclamped inductive switching (UIS) test in production, ensures a more reliable and robust end application
High conversion efficiency
Low R_DS(ON), minimizes power losses
Wettable flank for improved optical inspection
Fast switching speed

Low input capacitance
Lead-free finish, RoHS compliant
Halogen and antimony free, “green” device
Suitable for automotive applications requiring specific change control
AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949-certified facilities

Applications

Engine management systems
Body control electronics
DC-DC converters

Diodes Incorporated DMTH4M70SPGWQ N-Channel Enhancement Mode MOSFET

Features

Applications

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