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Nexperia NX6008NBK N-channel Trench MOSFETs

Nexperia NX6008NBK N-channel Trench MOSFETs are designed for fast switching actions and feature low threshold voltage. These MOSFETs operate at 60V drain-source voltage (VDS), 8V maximum gate-source voltage (VGS), and -55°C to 150°C junction temperature range (Tj). The NX6008NBK MOSFETs are used in applications like relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • SOT323, SOT363, and SOT23 SMD packages
  • ElectroStatic Discharge (ESD) protection > 2kV HBM

Specifications

  • 60V drain-source voltage (VDS)
  • 8V maximum gate-source voltage (VGS)
  • -55°C to 150°C junction temperature range (Tj)
  • -65°C to 150°C storage temperature range (Tstg)

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Characteristics Curve

Performance Graph - Nexperia NX6008NBK N-channel Trench MOSFETs

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Nexperia NX6008NBK N-channel Trench MOSFETs