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Qorvo QPD2018D 180um Discrete GaAs pHEMT Die

Qorvo QPD2018D 180um Discrete GaAs pHEMT Die utilizes Qorvo’s proven standard 0.25um power pHEMT production process. This proven process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.

The Qorvo QPD2018D 180um Discrete GaAs pHEMT Die operates from DC to 20GHz. The QPD2018D typically offers 22dBm of output power at P1dB with a gain of 14dB and 55% power-added efficiency at 1dB compression, making it ideal for high-efficiency applications. The protective overcoat layer with silicon nitride employs environmental robustness and scratch protection.

Features

  • DC to 20GHz Frequency range
  • 22dBm Typical output power P1dB
  • 14dB Typical gain at 12GHz
  • 55% Typical PAE at 12GHz
  • 1dB Typical NF at 12GHz
  • No vias
  • 0.25um GaAs pHEMT technology
  • 0.41mm x 0.34mm x 0.10mm Chip dimensions
  • Lead-free and RoHS compliant

Applications

  • Communications
  • Radar
  • Point-to-Point radio
  • Satellite communications

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Qorvo QPD2018D 180um Discrete GaAs pHEMT Die