Infineon Technologies BGSX33M5U16 RF CMOS Switch

Infineon Technologies BGSX33M5U16 RF CMOS Switch is a Triple-Pole Triple-Throw (3P3T) cross switch optimized for LTE and 5G antenna applications. The device is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65V to 1.95V. The BGSX33M5U16 features low insertion loss and low harmonic generation. External DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

The Infineon Technologies BGSX33M5U16 RF CMOS Switch is offered in a small 2.0mm x 2.0mm PG-ULGA-16 package ideal for space-constrained applications.

Features

High linearity up to 38dBm peak power
Fast switching time (max 2µs) for 5G SRS applications
Low insertion loss and high port to port isolation up to 7.125GHz
Enhanced isolation mode

Low power consumption allows supply V_IO
MIPI RFFE 2.1 control interface
Software and hardware programmable USID
2.0mm x 2.0mm x 0.6mm PG-ULGA-16 package
RoHS and WEEE compliant

Applications

Triple antenna routing and swapping for cellular mobile devices
Triple antenna routing and swapping for 5G SRS application
GSM, WCDMA, LTE, and 5G FR1 frequency band applications

4×4 MIMO applications
SAR reduction

Infineon Technologies BGSX33M5U16 RF CMOS Switch

Features

Applications

Block Diagram

Package Outline

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