Nexperia BC856xQC-Q PNP Transistors

Nexperia BC856xQC-Q PNP Transistors are 65V 100mA transistors ideal for general-purpose switching and amplification. The BC856xQC-Q Transistors feature high power dissipation, excellent thermal performance, and robust solder joints. The low operating temperature of these devices extends the total system reliability.

The Nexperia BC856xQC-Q PNP Transistors are available in a 1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package. The Side-Wettable Flanks (SWF) of the DFN package improve shear forces and board bending capabilities and enable visible solder joints to be inspected post soldering. These devices are AEC-Q101 qualified for use in automotive applications.

Features

AEC-Q101 qualified
High power dissipation capability
Low operating temperature
Excellent thermal performance
Smaller footprint compared to conventional leaded SMD packages

1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package; 0.8 mm pitch
SWF for Automatic Optical Inspection (AOI) of solder joints

Applications

General-purpose switching and amplification
Space-constrained applications

Specifications

-65V collector-emitter voltage (V_CEO)
-100m collector current (I_C)
DC current gain (h_FE)
- BC856AQC-Q: 125 to 250
- BC856BQC-Q: 220 to 475

-200mA peak collector current (I_CM)
-80V collector-base voltage (V_CBO)
-6V emitter-base voltage (V_EBO)
360mW to 450mW total power dissipation (P_tot)
-55°C to 150°C ambient operating temperature range (T_amb)

Resources

Datasheet
Package Information

Nexperia BC856xQC-Q PNP Transistors

Features

Applications

Specifications

Resources

Pin Designations

Package Outline

husseinkey ELECTRONICS®

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