onsemi NTMFS3D2N10MD N-Channel MOSFET

onsemi NTMFS3D2N10MD N-Channel MOSFET is designed using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimize the on-state resistance R_DS(on) to minimize conduction losses and yet maintain superior switching performance. The NTMFS3D2N10MD MOSFET features low Q_G and capacitance to minimize driver losses, low Q_RR, soft recovery body diode, and low Q_OSS to improve light-load efficiency. Typical applications include primary switches in isolated DC-DC converters, AC-DC adapters, synchronous rectification in DC-DC and AC-DC, BLDC motors, load switches, and solar inverters.

Features

Shielded Gate MOSFET technology
Max R_DS(on)=3.5mΩ at V_GS=10V, I_D=50A
Max R_DS(on)=5.8mΩ at V_GS=6V, I_D=30.5A
100V Drain-to-Source Voltage (V_DSS)
142A Continuous Drain Current (I_D max)
High efficiency and lowers switching noise/EMI
Low R_DS(on) to minimize conduction losses

Low Q_G and capacitance to minimize driver losses
Low Q_RRand soft recovery body diode
Low Q_OSS to improve light-load efficiency
MSL1 robust package design
100% UIL tested
RoHS compliant

Applications

Primary switch in isolated DC-DC converter
Synchronous Rectification (SR) in DC-DC and AC-DC
AC-DC adapters (USB PD) SR
Power supply
Load switch

Motor drive
Hotswap and O-Ring switch
BLDC motor
Solar inverter

onsemi NTMFS3D2N10MD N-Channel MOSFET

Features

Applications

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