Qorvo QPA2935 2W S-Band GaN Driver Amplifier

Qorvo QPA2935 2W S-Band GaN Driver Amplifier operates from 2.7GHz to 3.5GHz and delivers 33dBm of saturated output power and 18dB of large-signal gain while achieving greater than 52% power-added efficiency. The QPA2935 is fabricated on the QGaN25 0.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is matched to 50Ω with integrated DC blocking caps on both I/O ports.

The Qorvo QPA2935 S-Band GaN Driver Amplifier is housed in a compact 4mm x 4mm plastic overmolded package. This device is 100% DC and RF tested to ensure compliance with electrical specifications.

Features

2.7GHz to 3.5GHz frequency range
33dBm saturated output power (P_SAT)
52% power-added efficiency (PAE)
18dB large-signal gain
28.4dB small signal gain

15dB input return loss
Bias: V_D = 25V, I_DQ = 29mA
-40°C to +85°C operating temperature range
4mm x 4mm x 0.85 plastic overmolded package
Lead-free, halogen-free, and RoHS compliant

Applications

Electronic warfare
Civilian and military radar

Qorvo QPA2935 2W S-Band GaN Driver Amplifier

Features

Applications

Block Diagram

Package Outline

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