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Diodes Incorporated DMTH8001STLW Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.1mΩ typical, 1.7mΩ maximum) and superior switching performance. The DMTH8001STLW has an 80V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.
The Diodes Incorporated DMTH8001STLW Enhancement Mode MOSFET is offered in the thermally efficient and compact PowerDI®1012-8 (TOLL) package. Designed to handle currents up to 300A, the TOLL package occupies 20% less PCB area than the industry-standard TO263. With an off-board profile of 2.4mm, the TOLL package is ideal for compact and high-density designs. The low package inductance of the TOLL provides improved EMI performance, and the tin-plated grooved leads ensure that the needs of automatic optical inspections (AOI) are met.
