onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability. The MOSFET has low ON resistance and its compact chip size ensures low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Typ. RDS(on) = 44m @ VGS = 18V
  • Typ. RDS(on) = 60m @ VGS = 15V
  • Ultra Low Gate Charge (QG(tot) = 74nC)
  • Low Capacitance (Coss = 133pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Pb−Free and is RoHS Compliant

Applications

  • SMPS (Switching Mode Power Supplies)
  • Solar Inverters
  • UPS (Uninterruptable Power Supplies)
  • Energy Storages

onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET