onsemi NXH010P120MNF1 SiC Module

onsemi NXH010P120MNF1 SiC Module contains a 10Mohm 1200V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 18-20V. The NXH010P120MNF1 has an improved RDS(ON) at a higher voltage and low thermal resistance.

Features

Recommended gate voltage 18V – 20V
Improved RDS(ON) at a higher voltage
Low thermal resistance

Improved efficiency or higher power density
Options for TIM or no TIM
Flexible solution for high-reliability thermal interface

Applications

AC-DC Conversion
DC-AC Conversion
DC-DC Conversion

Schematic Diagram

onsemi NXH010P120MNF1 SiC Module

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