Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs

Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs offer ESD-protected gate fast switching times ideal for signal processing, logic level converter, and driver applications. The MMBT7002K features a 60V drain-source voltage, 20V gate-source voltage, and 350mW power dissipation. The devices are available in a SOT-23 package and operate at an -55C to 150C junction temperature. The Diotec MMBT7002K N-Channel Enhancement Mode FETs are compliant with RoHS, REACH, and conflict minerals.

Features

ESD protected gate fast switching times
Compliant to RoHS (w/o exemption), REACH, conflict minerals

Applications

Signal processing, logic level converter, drivers
Commercial grade

Suffix -Q: AEC-Q101 compliant
Suffix -AQ: in AEC-Q101 qualification

Specifications

60V Drain source voltage
20V Gate source voltage
350mW Power dissipation

300mA Drain current
800mA Peak drain current
-55°C to 150°C Junction temperature

Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs

Features

Applications

Specifications

Package/Circuit Application

Dimensions mm

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