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STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.

The STM STP60N043DM9 MDmesh DM9 Power MOSFET has a very low recovery charge (Qrr), time (trr), and RDS(on). These features tailor the fast-switching super-junction Power MOSFET for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Features

  • Fast-recovery body diode
  • Excellent RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance, and resistance
  • 100% avalanche tested
  • Extremely dv/dt ruggedness

Applications

  • Power supplies and converters
  • LLC resonant converter

Typical Application

Application Circuit Diagram - STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET

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STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET