NXP Semiconductors A5G35H120N Airfast RF Power GaN Transistor

NXP Semiconductors A5G35H120N Airfast RF Power GaN Transistor is an 18W asymmetrical Doherty RF power GaN transistor. It is designed for cellular base station applications requiring a very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700MHz.

Features

High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next-generation signal
Able to withstand extremely high output VSWR and broadband operating conditions

Designed for low complexity analog or digital linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations

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