PANJIT 60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (R_DS(ON)) and maintain superior switching performance. These devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. These MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers.

The PANJIT P-Channel 60V Enhancement Mode MOSFETs are offered in SOP-8, SOT-223-3, SOT-23-3, SOT-23-6, SOT-323-3, SOT-563-6, and TO-252AA-3 packages for design flexibility. AEC-Q101 qualified options are available for use in automotive applications.

Features

Advanced Trench Process technology
-60V drain-source voltage (V_DS)
200mA to 16A continuous drain current (I_D)
-20V, +20V gate-source voltage (V_GS)
4mΩ to 240mΩ on-resistance (R_DS(ON))
20ns to 65ns typical turn-on delay time (td_(on))
4.4ns to 13ns typical turn-off delay time (td_(off))

15ns to 42ns rise time (t_r)
1.1nC to 22nC gate charge (Q_g)
300mW to 50W power dissipation (P_d)
SOP-8, SOT-223-3, SOT-23-3, SOT-23-6, SOT-323-3, SOT-563-6, TO-252AA-3 package options
Lead-free in compliance with EU RoHS 2011/65/EU directive
AEC-Q101 qualified options available