onsemi NXH40B120MNQ0 Full SiC MOSFET Module

onsemi NXH40B120MNQ0 Full SiC MOSFET Module contains a dual boost stage consisting of two 40mΩΩ/1200V SiC MOSFETs and two 40A/1200V SiC diodes. This integrated SiC MOSFETs and SiC diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. The NXH40B120MNQ0 full SiC MOSFET module contains two additional 50A/1200V bypass rectifiers used for the inrush current limit and an onboard thermistor. This full SiC MOSFET module features low reverse recovery and fast switching SiC diodes, low inductive layout, solder pins, and thermistor. The NXH40B120MNQ0 full SiC MOSFET module is ideally used in solar inverters and uninterruptible power supplies.

Features

  • Low reverse recovery and fast switching SiC diodes
  • 1200V bypass and anti−parallel diodes
  • Low inductive layout
  • −40°C to 125°C of the storage temperature range
  • Solder pins
  • Thermistor
  • These devices is pb−free, halogen-free, and is RoHS compliant

Applications

  • Solar inverters
  • Uninterruptable power supplies

Schematic Diagram

Schematic - onsemi NXH40B120MNQ0 Full SiC MOSFET Module

onsemi NXH40B120MNQ0 Full SiC MOSFET Module