- support@husseinkey.com
- livechat
UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs in a D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a superior RDS x Area Figure of Merit, resulting in low conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach offers low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling.
These SiC FETs feature a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. The standard gate-drive characteristics of the FETs make them ideal replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs are ESD protected and are ideal for use in onboard chargers, soft-switched DC-DC converters, battery charging (fast DC and industrial), and IT/Server power supplies.
