onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs

onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs are housed in a TO-247-3L package and designed to be fast and rugged. The onsemi NTHL015N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Features

Typ. R_DS(on) = 12m @ V_GS = 18V
Typ. R_DS(on) = 15m @ V_GS = 15V
Ultra Low Gate Charge (Q_G(tot) = 283nC)
High-Speed Switching with Low Capacitance (C_oss = 430pF)

100% Avalanche Tested
This Device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)

Applications

SMPS (Switching Mode Power Supplies)
Solar inverters

UPS (Uninterruptable Power Supplies)
Energy storage

onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs

Features

Applications

husseinkey ELECTRONICS®

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